Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique.
Identifieur interne : 000665 ( Main/Exploration ); précédent : 000664; suivant : 000666Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique.
Auteurs : RBID : pubmed:23546235Abstract
Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the film thickness, and the optical losses that are obtained on the planar waveguides: n0=2.224±0.001 and n(e)=2.219±0.001 at 1539 nm. Furthermore, in order to demonstrate the active property of the BTO films, we have investigated the electro-optic (EO) properties by using the change of the resonant coupling angle (variation of fundamental TE0 guided mode) when the transverse electric field is applied. The latter is induced by the refractive index variation (Δn) caused by the EO effect when a static electric field is applied transversely to the film. The EO coefficient obtain is about 18 pm/V for TE mode and 23 pm/V for TM modes at 1539 nm. This value illustrates the suitability of the BTO material thin film with a polycrystalline structure for applications such as modulations, switching, and interconnections.
PubMed: 23546235
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique.</title><author><name sortKey="Leroy, Floriane" uniqKey="Leroy F">Floriane Leroy</name><affiliation wicri:level="1"><nlm:affiliation>Institut Electronique Microélectronique et Nanotechnologies, UMR CNRS 8520, Villeneuve d'Ascq, France.</nlm:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Institut Electronique Microélectronique et Nanotechnologies, UMR CNRS 8520, Villeneuve d'Ascq</wicri:regionArea><wicri:noRegion>Villeneuve d'Ascq</wicri:noRegion></affiliation></author><author><name sortKey="Rousseau, Anthony" uniqKey="Rousseau A">Anthony Rousseau</name></author><author><name sortKey="Payan, Sandrine" uniqKey="Payan S">Sandrine Payan</name></author><author><name sortKey="Dogheche, Elhadj" uniqKey="Dogheche E">Elhadj Dogheche</name></author><author><name sortKey="Jenkins, David" uniqKey="Jenkins D">David Jenkins</name></author><author><name sortKey="Decoster, Didier" uniqKey="Decoster D">Didier Decoster</name></author><author><name sortKey="Maglione, Mario" uniqKey="Maglione M">Mario Maglione</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="RBID">pubmed:23546235</idno><idno type="pmid">23546235</idno><idno type="wicri:Area/Main/Corpus">000711</idno><idno type="wicri:Area/Main/Curation">000711</idno><idno type="wicri:Area/Main/Exploration">000665</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the film thickness, and the optical losses that are obtained on the planar waveguides: n0=2.224±0.001 and n(e)=2.219±0.001 at 1539 nm. Furthermore, in order to demonstrate the active property of the BTO films, we have investigated the electro-optic (EO) properties by using the change of the resonant coupling angle (variation of fundamental TE0 guided mode) when the transverse electric field is applied. The latter is induced by the refractive index variation (Δn) caused by the EO effect when a static electric field is applied transversely to the film. The EO coefficient obtain is about 18 pm/V for TE mode and 23 pm/V for TM modes at 1539 nm. This value illustrates the suitability of the BTO material thin film with a polycrystalline structure for applications such as modulations, switching, and interconnections.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23546235</PMID><DateCreated><Year>2013</Year><Month>04</Month><Day>02</Day></DateCreated><DateCompleted><Year>2013</Year><Month>09</Month><Day>30</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1539-4794</ISSN><JournalIssue CitedMedium="Internet"><Volume>38</Volume><Issue>7</Issue><PubDate><Year>2013</Year><Month>Apr</Month><Day>1</Day></PubDate></JournalIssue><Title>Optics letters</Title><ISOAbbreviation>Opt Lett</ISOAbbreviation></Journal><ArticleTitle>Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique.</ArticleTitle><Pagination><MedlinePgn>1037-9</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OL.38.001037</ELocationID><Abstract><AbstractText>Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the film thickness, and the optical losses that are obtained on the planar waveguides: n0=2.224±0.001 and n(e)=2.219±0.001 at 1539 nm. Furthermore, in order to demonstrate the active property of the BTO films, we have investigated the electro-optic (EO) properties by using the change of the resonant coupling angle (variation of fundamental TE0 guided mode) when the transverse electric field is applied. The latter is induced by the refractive index variation (Δn) caused by the EO effect when a static electric field is applied transversely to the film. The EO coefficient obtain is about 18 pm/V for TE mode and 23 pm/V for TM modes at 1539 nm. This value illustrates the suitability of the BTO material thin film with a polycrystalline structure for applications such as modulations, switching, and interconnections.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Leroy</LastName><ForeName>Floriane</ForeName><Initials>F</Initials><Affiliation>Institut Electronique Microélectronique et Nanotechnologies, UMR CNRS 8520, Villeneuve d'Ascq, France.</Affiliation></Author><Author ValidYN="Y"><LastName>Rousseau</LastName><ForeName>Anthony</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Payan</LastName><ForeName>Sandrine</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Dogheche</LastName><ForeName>Elhadj</ForeName><Initials>E</Initials></Author><Author ValidYN="Y"><LastName>Jenkins</LastName><ForeName>David</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Decoster</LastName><ForeName>Didier</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Maglione</LastName><ForeName>Mario</ForeName><Initials>M</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Lett</MedlineTA><NlmUniqueID>7708433</NlmUniqueID><ISSNLinking>0146-9592</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>4</Month><Day>3</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>4</Month><Day>3</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>4</Month><Day>3</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">251493</ArticleId><ArticleId IdType="pubmed">23546235</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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